XCH 4N65M

XCH · FETs & Power MOSFETs · MPN 4N65M

No reviews yet — be the first to review XCH 4N65M.

Specifications

Drain to Source Voltage650V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)53pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation75W
RDS(on)2.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)3.5pF
Number1 N-channel
Input Capacitance(Ciss)610pF
TypeN-Channel

Technical details

N-Channel 650V 4A 75W Surface Mount TO-252

Related FETs & Power MOSFETs