XCH 4N65F

XCH · FETs & Power MOSFETs · MPN 4N65F

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)10nC@10V
Output Capacitance(Coss)53pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation35W
RDS(on)2.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)3.5pF
Number1 N-channel
Input Capacitance(Ciss)610pF
TypeN-Channel

Technical details

N-Channel 650V 4A 35W Through Hole TO-220F

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