WUXI UNIGROUP MICRO · FETs & Power MOSFETs · MPN TTB30P10AT
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| Gate Charge(Qg) | 140nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 376pF |
| RDS(on) | 35mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.513nF |
100V 30A 1.7V 136W 35mΩ@10V 1 P-Channel TO-263-2 Single FETs, MOSFETs RoHS