WUXI UNIGROUP MICRO · FETs & Power MOSFETs · MPN TTB115N08A
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| Gate Charge(Qg) | 112nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 115A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 261pF |
| RDS(on) | 6.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.65nF |
80V 115A 3V 200W 6.4mΩ@10V 1 N-channel TO-263-2 Single FETs, MOSFETs RoHS