WUXI UNIGROUP MICRO · FETs & Power MOSFETs · MPN TSJ10N10AT
No reviews yet — be the first to review WUXI UNIGROUP MICRO TSJ10N10AT.
| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 10.3pF |
| RDS(on) | 19mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.134nF |
100V 8A 1.1V 3.1W 19mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS