WUXI UNIGROUP MICRO · FETs & Power MOSFETs · MPN TSG12N10AT
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 56.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 15.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.455nF |
| Type | N-Channel |
100V 55A 2.5V 56.5W 15.5mΩ@4.5V 1 N-channel N-Channel DFN-8-EP(5.8x5.3) Single FETs, MOSFETs RoHS