WUXI UNIGROUP MICRO TPD80R900M

WUXI UNIGROUP MICRO · FETs & Power MOSFETs · MPN TPD80R900M

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)0.31pF
RDS(on)790mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)528.6pF

Technical details

N-Channel 800V 6A 63W Surface Mount TO-252

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