WUXI UNIGROUP MICRO · FETs & Power MOSFETs · MPN TPD80R900M
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.31pF |
| RDS(on) | 790mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 528.6pF |
N-Channel 800V 6A 63W Surface Mount TO-252