WUXI UNIGROUP MICRO TPD60R1K4M

WUXI UNIGROUP MICRO · FETs & Power MOSFETs · MPN TPD60R1K4M

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Specifications

Gate Charge(Qg)7.1nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)1.9pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)231pF

Technical details

600V 3A 2.5V 28W 1.4Ω@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS

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