WUXI UNIGROUP MICRO · FETs & Power MOSFETs · MPN TPB65R950M
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| Gate Charge(Qg) | 9.6nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 37W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.1pF |
| RDS(on) | 870mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 320pF |
650V 4.5A 4V 37W 870mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS