Winsok Semicon WSP11N10T

Winsok Semicon · FETs & Power MOSFETs · MPN WSP11N10T

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)58pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)70mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.055nF
TypeN-Channel

Technical details

N-Channel Array 100V 12A 1.5W Surface Mount SOP-8

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