Winsok Semicon · FETs & Power MOSFETs · MPN WSD80N10GDN56
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| Output Capacitance(Coss) | 800pF |
|---|---|
| Pd - Power Dissipation | 111W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 44nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 6.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
111W 100V 1.7V 6.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS