Winsok Semicon WSD27N10DN56

Winsok Semicon · FETs & Power MOSFETs · MPN WSD27N10DN56

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Specifications

Gate Charge(Qg)14nC@10V;30nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)18A
Output Capacitance(Coss)120pF;85pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation37.5W
Reverse Transfer Capacitance (Crss@Vds)24pF;60pF
RDS(on)50mΩ@10V;80mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)800pF;1.41nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 100V 18A 37.5W DFN5x6C-8-EP

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