Winsok Semicon WSD23N10DN33

Winsok Semicon · FETs & Power MOSFETs · MPN WSD23N10DN33

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation17.8W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)100mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)445pF

Technical details

N-Channel+P-Channel Array 100V 12A 17.8W Surface Mount DFN-8(3x3)

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