Winsok Semicon · FETs & Power MOSFETs · MPN WSD2018DN22
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| Gate Charge(Qg) | 32nC@5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| RDS(on) | 15mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
| Type | N-Channel |
20V 12A 1V 1.5W 15mΩ@4.5V 1 N-channel N-Channel PDFN-6-EP(2x2) Single FETs, MOSFETs RoHS