Winsok Semicon WSD2018BDN22

Winsok Semicon · FETs & Power MOSFETs · MPN WSD2018BDN22

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)8.5nC@4.5V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)12.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.8W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)11.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)850pF
TypeN-Channel

Technical details

N-Channel 12V 12.3A 2.8W Surface Mount DFNWB-6-EP(2x2)

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