Winsok Semicon WSD2012DN25

Winsok Semicon · FETs & Power MOSFETs · MPN WSD2012DN25

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)295pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)238pF
RDS(on)9.5mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.511nF
TypeN-Channel

Technical details

N-Channel Array 20V 11A 1.7W Surface Mount DFN-6(4.5x2)

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