WILLSEMI WPT2E33-3/TR

WILLSEMI · Transistors (BJTs) · MPN WPT2E33-3/TR

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP 30V 3A 1.5W Surface Mount SOT-89-3L

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