WILLSEMI WPM5001-3/TR

WILLSEMI · FETs & Power MOSFETs · MPN WPM5001-3/TR

No reviews yet — be the first to review WILLSEMI WPM5001-3/TR.

Specifications

Drain to Source Voltage50V
Gate Charge(Qg)890pC@10V
Output Capacitance(Coss)27.4pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation400mW
RDS(on)10Ω@5V
Reverse Transfer Capacitance (Crss@Vds)17.8pF
Number1 P-Channel
Input Capacitance(Ciss)66.7pF
TypeP-Channel

Technical details

P-Channel 50V 0.2A 0.4W Surface Mount SOT-23

Related FETs & Power MOSFETs