WILLSEMI WPM2019-3/TR

WILLSEMI · FETs & Power MOSFETs · MPN WPM2019-3/TR

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Specifications

Gate Charge(Qg)1.8nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)10.8pF
Current - Continuous Drain(Id)730mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation380mW
Reverse Transfer Capacitance (Crss@Vds)10.2pF
RDS(on)780mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)74.5pF
TypeP-Channel

Technical details

P-Channel 20V 0.73A 0.38W Surface Mount SOT-523

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