WILLSEMI WPM2006-6/TR

WILLSEMI · FETs & Power MOSFETs · MPN WPM2006-6/TR

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Specifications

Gate Charge(Qg)7.2nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)46pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.45W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)150mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)480pF
TypeP-Channel

Technical details

P-Channel 20V 3A 1.45W Surface Mount DFN2x2-6L

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