WILLSEMI · FETs & Power MOSFETs · MPN WPM2005B-8/TR
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| Gate Charge(Qg) | 6.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 150pF |
| Current - Continuous Drain(Id) | 2.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 810mV |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 125mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 300pF |
P-Channel 20V 2.7A 1.1W Surface Mount DFN-8L(1.7x2)