WILLSEMI WNMD4800-8/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNMD4800-8/TR

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Specifications

Gate Charge(Qg)19.9nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
RDS(on)27mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)93pF
Input Capacitance(Ciss)834pF
TypeN-Channel

Technical details

30V 5.4A 1.5V 1.2W 27mΩ@10V N-Channel SOP-8L Single FETs, MOSFETs RoHS

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