WILLSEMI · FETs & Power MOSFETs · MPN WNMD2201-4/TR
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 18.7nC@4.5V |
| Configuration | - |
| Current - Continuous Drain(Id) | 6.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 540mW |
| RDS(on) | 11.9mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 158pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.522nF |
20V 6.2A 900mV 540mW 11.9mΩ@4.5V 2 N-Channel CSP-4L Single FETs, MOSFETs RoHS