WILLSEMI · FETs & Power MOSFETs · MPN WNMD2190-6/TR
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| Gate Charge(Qg) | 33nC@4V |
|---|---|
| Drain to Source Voltage | 12V |
| Configuration | Common source |
| Current - Continuous Drain(Id) | 9.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Pd - Power Dissipation | 490mW |
| Reverse Transfer Capacitance (Crss@Vds) | 358pF |
| RDS(on) | 10mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.038nF |
12V 9.2A 500mV 490mW 10mΩ@2.5V 2 N-Channel CSP-6L Single FETs, MOSFETs RoHS