WILLSEMI WNMD2188-10/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNMD2188-10/TR

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Specifications

Gate Charge(Qg)31.5nC@4V
Drain to Source Voltage12V
Configuration-
Output Capacitance(Coss)657pF
Current - Continuous Drain(Id)13.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation600mW
RDS(on)2.95mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)540pF
Number2 N-Channel
Input Capacitance(Ciss)3.133nF

Technical details

N-Channel Array 12V 13.7A 0.6W Surface Mount CSP-10L

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