WILLSEMI · FETs & Power MOSFETs · MPN WNMD2188-10/TR
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| Gate Charge(Qg) | 31.5nC@4V |
|---|---|
| Drain to Source Voltage | 12V |
| Configuration | - |
| Output Capacitance(Coss) | 657pF |
| Current - Continuous Drain(Id) | 13.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 600mW |
| RDS(on) | 2.95mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 540pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 3.133nF |
N-Channel Array 12V 13.7A 0.6W Surface Mount CSP-10L