WILLSEMI WNMD2176-6/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNMD2176-6/TR

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Specifications

Gate Charge(Qg)3.1nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))780mV
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)56mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)190pF
TypeN-Channel

Technical details

N-Channel Array 20V 2.6A 1.1W Surface Mount SOT-23-6L

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