WILLSEMI · FETs & Power MOSFETs · MPN WNMD2171-4/TR
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF |
| RDS(on) | 38mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
20V 38mΩ@4.5V 2 N-Channel CSP-4L Single FETs, MOSFETs RoHS