WILLSEMI · FETs & Power MOSFETs · MPN WNMD2167-6/TR
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| Gate Charge(Qg) | 10.9nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 127pF |
| Current - Continuous Drain(Id) | 6.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 21mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 850pF |
| Type | N-Channel |
N-Channel Array 20V 6.3A 1.1W Surface Mount SOT-23-6L