WILLSEMI WNMD2055-6/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNMD2055-6/TR

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)18.2nC@4.5V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))450mV
Pd - Power Dissipation20W
RDS(on)8.2mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)211pF
Number2 N-Channel
Input Capacitance(Ciss)1.6nF

Technical details

20V 18A 450mV 20W 8.2mΩ@4.5V 2 N-Channel DFN-6L(2x3) Single FETs, MOSFETs RoHS

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