WILLSEMI WNM6012-3/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM6012-3/TR

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Specifications

Gate Charge(Qg)3.4nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)2.2pF
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation1.008W
RDS(on)24Ω@2.5V
Reverse Transfer Capacitance (Crss@Vds)700fF
Number1 N-channel
Input Capacitance(Ciss)9.4pF
TypeN-Channel

Technical details

N-Channel 60V 250mA 1008mW Surface Mount DFN1006-3L

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