WILLSEMI WNM6011-8/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM6011-8/TR

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Specifications

Gate Charge(Qg)50.2nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation46W
RDS(on)9.5mΩ@6V
Reverse Transfer Capacitance (Crss@Vds)27.6pF
Number1 N-channel
Input Capacitance(Ciss)3.022nF

Technical details

80V 65A 2V 46W 9.5mΩ@6V 1 N-channel TO-252E-2L Single FETs, MOSFETs RoHS

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