WILLSEMI WNM6010-3/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM6010-3/TR

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)76A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation53W
RDS(on)5.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)63pF
Number1 N-channel
Input Capacitance(Ciss)2.844nF

Technical details

60V 76A 2V 53W 5.4mΩ@10V 1 N-channel TO-252E-2L Single FETs, MOSFETs RoHS

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