WILLSEMI WNM6006-8/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM6006-8/TR

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)1.72nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)3.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.91nF
TypeN-Channel

Technical details

N-Channel 60V 100A 25W Surface Mount PDFN5x6-8L

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