WILLSEMI WNM6002-3/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM6002-3/TR

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Specifications

Configuration-
Gate Charge(Qg)1.2nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)5.2pF
RDS(on)1.7Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)23.37pF

Technical details

N-Channel 60V 0.3A Surface Mount SOT-323

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