WILLSEMI WNM5002-3/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM5002-3/TR

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)1.6nC@10V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation690mW
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)36pF
TypeN-Channel

Technical details

N-Channel 50V 0.5A 0.69W Surface Mount SOT-23

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