WILLSEMI WNM4009-3/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM4009-3/TR

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Specifications

Drain to Source Voltage110V
Gate Charge(Qg)7.5nC@10V
Output Capacitance(Coss)28pF
Current - Continuous Drain(Id)1.45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.15W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)310mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)317pF
TypeN-Channel

Technical details

N-Channel 110V 1.45A 1.15W Surface Mount SOT-23

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