WILLSEMI WNM4001-3/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM4001-3/TR

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Specifications

Gate Charge(Qg)750pC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation250mW
RDS(on)700mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)8pF
Input Capacitance(Ciss)67pF
TypeN-Channel

Technical details

20V 500mA 1V 250mW 700mΩ@4.5V N-Channel SOT-523 Single FETs, MOSFETs RoHS

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