WILLSEMI WNM3019-3/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM3019-3/TR

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)1.6nC@10V
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation370mW
RDS(on)15Ω@1.8V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)36pF
TypeN-Channel

Technical details

N-Channel 50V 0.25A 0.37W Surface Mount SOT-523

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