WILLSEMI · FETs & Power MOSFETs · MPN WNM2096-3/TR
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| Gate Charge(Qg) | 1.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 11pF |
| Current - Continuous Drain(Id) | 800mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 480mW |
| RDS(on) | 1.5Ω@1.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 29pF |
| Type | N-Channel |
N-Channel 20V 800mA 480mW Surface Mount DFN1006-3L