WILLSEMI WNM2020-3/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM2020-3/TR

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Specifications

Gate Charge(Qg)1.15nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))850mV
Pd - Power Dissipation380mW
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)320mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)50pF
TypeN-Channel

Technical details

N-Channel 20V 0.9A 0.38W Surface Mount SOT-23

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