WILLSEMI · FETs & Power MOSFETs · MPN WNM2016A-3/TR
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| Gate Charge(Qg) | 4.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 53pF |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 33mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 247pF |
| Type | N-Channel |
N-Channel 20V 4.7A 1.4W Surface Mount SOT-23