WILLSEMI WNM01N11-6/TR

WILLSEMI · FETs & Power MOSFETs · MPN WNM01N11-6/TR

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Specifications

Drain to Source Voltage110V
Gate Charge(Qg)7.5nC@10V
Output Capacitance(Coss)25.6pF
Current - Continuous Drain(Id)2.13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)15.6pF
RDS(on)310mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)300pF
TypeN-Channel

Technical details

N-Channel 110V 2.13A 2.5W Surface Mount SOT-23-6L

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