WILLSEMI · FETs & Power MOSFETs · MPN WNM01N10-3/TR
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| Gate Charge(Qg) | 3.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 1.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 14.2pF |
| RDS(on) | 255mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
100V 1.7A 1.9V 1.5W 255mΩ@4.5V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS