WILLSEMI · FETs & Power MOSFETs · MPN WCR250N65DV
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| Gate Charge(Qg) | 31nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 56W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| RDS(on) | 255mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.202nF |
650V 10A 3V 56W 255mΩ@10V 1 N-channel DFN-4L(8x8) Single FETs, MOSFETs RoHS