WILLSEMI · FETs & Power MOSFETs · MPN WCR1K2N65TG-3/TR
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 10.4nC@10V |
| Current - Continuous Drain(Id) | 2.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 50W |
| RDS(on) | 1.05Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 272pF |
650V 2.5A 2V 50W 1.05Ω@10V 1 N-channel TO-252E-2L Single FETs, MOSFETs RoHS