WILLSEMI · FETs & Power MOSFETs · MPN WCR190N65TF-3/T
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 40.4nC@10V |
| Current - Continuous Drain(Id) | 9.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 46W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.621nF |
650V 9.9A 3V 46W 150mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS