WILLSEMI · FETs & Power MOSFETs · MPN WCR190N65DV
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 143W |
| RDS(on) | 200mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.584nF |
650V 17A 4V 143W 200mΩ@10V 1 N-channel DFN-4L(8x8) Single FETs, MOSFETs RoHS