WILLSEMI WCN770N15S

WILLSEMI · FETs & Power MOSFETs · MPN WCN770N15S

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)14.5nC@10V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
RDS(on)76mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)874pF

Technical details

150V 4.5A 2V 3W 76mΩ@6V 1 N-channel SOP-8L Single FETs, MOSFETs RoHS

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