WILLSEMI WCM2002-6/TR

WILLSEMI · FETs & Power MOSFETs · MPN WCM2002-6/TR

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)1.8nC@10V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)880mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation380mW
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)520mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)74.5pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 20V 0.88A 0.38W Surface Mount SOT-363

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