WILLSEMI WCM2001-6/TR

WILLSEMI · FETs & Power MOSFETs · MPN WCM2001-6/TR

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Specifications

Gate Charge(Qg)1.15nC@4.5V;6nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)13pF;55pF
Current - Continuous Drain(Id)650mA;3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))550mV;560mV
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)8pF;50pF
RDS(on)180mΩ@4.5V;85mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)50pF;470pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 20V Surface Mount DFN2x2-6L

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